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Transistors
2SD1149
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• High emitter-base voltage (Collector open) V
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
CE(sat)
EBO
= 25°C
a
Symbol
Rating
V
100
CBO
V
100
CEO
V
15
EBO
I
20
C
I
50
CP
P
200
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V
I
CBO
C
= 1 mA, I
V
I
CEO
C
= 10 µA, I
V
I
EBO
E
I
V
CBO
CB
= 60 V, I
I
V
CEO
CE
*
h
V
= 10 V, I
FE
CE
= 10 mA, I
V
I
CE(sat)
C
f
V
T
CB
R
S
400 to 800
600 to 1 200
SJC00208BED
10˚
Unit
V
V
V
mA
Marking symbol ： 1V
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 60 V, I
= 0
E
= 0
B
= 2 mA
C
= 1 mA
B
= 10 V, I
= −2 mA, f = 200 MHz
E
+0.10
0.40
–0.05
0.16
3
2
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Min
Typ
Max
100
100
15
0.1
1.0
400
1 200
0.05
0.20
100
Unit: mm
+0.10
–0.06
Unit
V
V
V
µA
µA
V
MHz
1
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Summary of Contents for Panasonic 2SD1149
- Page 1 Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • High forward current transfer ratio h • Low collector-emitter saturation voltage V • High emitter-base voltage (Collector open) V • Mini type package, allowing downsizing of the equipment and...
- Page 2 2SD1149 T ( °C ) Ambient temperature T I CE(sat) = 10 = 75°C 25°C −25°C 0.01 ( mA ) Collector current I V f = 1 MHz = 25°C ( V ) Collector-base voltage V V = 25°C...
- Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.