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Transistors
2SA1790J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626J
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: July 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol
Rating
−30
V
CBO
−20
V
CEO
−5
V
EBO
−30
I
C
P
125
C
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
V
BE
CE
I
V
CBO
CB
I
V
CEO
CE
I
V
EBO
EB
*
h
V
FE
CE
= −10 mA, I
V
I
CE(sat)
C
f
V
T
CB
NF
V
CB
Z
V
rb
CB
C
V
re
CB
B
C
70 to 140
110 to 220
Unit: mm
Unit
V
V
V
EIAJ: SC-89
mA
SSMini3-F1 Package
mW
Marking Symbol: E
°C
°C
Conditions
= −10 V, I
= −1 mA
C
= −10 V, I
= 0
E
= −20 V, I
= 0
B
= −5 V, I
= 0
C
= −10 V, I
= −1 mA
C
= −1 mA
B
= −10 V, I
= 1 mA, f = 200 MHz
E
= −10 V, I
= 1 mA, f = 5 MHz
E
= −10 V, I
= 1 mA, f = 2 MHz
E
= −10 V, I
= 1 mA, f = 10.7 MHz
E
SJC00291AED
+0.05
1.60
–0.03
0.12
1.00
±0.05
3
1
2
0.27
±0.02
(0.50)(0.50)
5˚
Min
Typ
Max
− 0.7
− 0.1
−100
−10
70
220
− 0.1
150
300
2.8
4.0
22
50
1.2
2.0
+0.03
–0.01
1: Base
2: Emitter
3: Collector
Unit
V
µA
µA
µA
V
MHz
dB
Ω
pF
1
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Summary of Contents for Panasonic 2SA1790J
- Page 1 Transistors 2SA1790J Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4626J ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency f • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■...
- Page 2 2SA1790J T ( °C ) Ambient temperature T I = −10 V = 75°C 25°C −25°C − 0.1 −1 −10 −100 Collector current I (mA) V −25 = 25°C = −250 µA −20 −200 µA −15 −150 µA −100 µA...
- Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.